Optical nonlinear effects in GaAs/GaAlAs Bragg reflectors
- 15 March 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (6) , 3190-3191
- https://doi.org/10.1063/1.345402
Abstract
Band filling effects are used to modify the absorption and refractive index of bulk GaAs/Ga1−xAlxAs layers in a Bragg reflector in the wavelength region between the band gap of the two materials. Significant reflectivity modifications are observed in a subpicosecond regime.This publication has 5 references indexed in Scilit:
- Optically pumped GaAs surface-emitting laser with integrated Bragg reflectorElectronics Letters, 1988
- Modulation of light by an electrically tunable multilayer interference filterApplied Physics Letters, 1987
- Optical bleaching in an epitaxial (Al,Ga)As Fabry–Perot resonatorApplied Physics Letters, 1987
- GaAs-AlAs monolithic microresonator arraysApplied Physics Letters, 1987
- Visible, room-temperature, surface-emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter-wave high reflectors and AlGaAs/GaAs multiple quantum wellsApplied Physics Letters, 1987