The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substrates
- 2 May 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 139 (3-4) , 231-237
- https://doi.org/10.1016/0022-0248(94)90171-6
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- InGaAs/InP quantum wires selectively grown by chemical beam epitaxyJournal of Crystal Growth, 1993
- High-brightness InGaAlP green light-emitting diodesApplied Physics Letters, 1992
- Improvement of the threshold current of AlGaAs/GaAs single quantum well lasers by substrate tiltingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Direct evidence of lateral bandgap patterning on stepped structures grown on non-planar, vicinal GaAs surfaces by cathodoluminescence investigationsJournal of Crystal Growth, 1991
- Quantum wire lasers by OMCVD growth on nonplanar substratesJournal of Crystal Growth, 1991
- Single quantum wire semiconductor lasersApplied Physics Letters, 1989
- Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substratesIEEE Journal of Quantum Electronics, 1989
- Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double-barrier heterostructuresApplied Physics Letters, 1989
- Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAsJournal of Applied Physics, 1988
- Vapor growth of InGaAs and InP on (100), (110), (111), (311) and (511) InP substratesJournal of Crystal Growth, 1982