Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAs
- 1 February 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (3) , 743-748
- https://doi.org/10.1063/1.340066
Abstract
The incorporation of Si in high‐purity lightly Si‐doped GaAs grown simultaneously on (100), (311)A, and (311)B GaAs substrates by molecular‐beam epitaxy has been studied. Photothermal ionization spectroscopy shows that Si is incorporated predominantly as a donor for growth on (100) and (311)B substrates, whereas low‐temperature photoluminescence shows that Si is incorporated predominantly as an acceptor for growth on a (311)A substrate. Spectroscopic and Hall‐effect measurements show that the dominance of Si donors in the samples grown on the (100) and (311)B substrates renders these samples n‐type while the dominance of Si acceptors in the sample grown on the (311)A substrate renders that sample p‐type.This publication has 16 references indexed in Scilit:
- Molecular-beam-epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientationJournal of Applied Physics, 1986
- Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructuresApplied Physics Letters, 1985
- Low compensation vapor phase epitaxial gallium arsenideApplied Physics Letters, 1983
- Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1983
- Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPEJournal of Electronic Materials, 1983
- An analytical evaluation of GaAs grown with commercial and repurified trimethylgalliumJournal of Electronic Materials, 1982
- Residual impurities in high purity GaAs epitaxial layers grown by liquid phase epitaxyThin Solid Films, 1980
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAsJapanese Journal of Applied Physics, 1974
- Shallow acceptor luminescence in GaAs grown by liquid phase epitaxySolid State Communications, 1972