On the electromigration failure under pulsed conditions
- 1 March 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (5) , 1929-1931
- https://doi.org/10.1063/1.342879
Abstract
Pulsed electromigration experiments on a series of Al‐1% Si test stripes deposited on 0.5 μm SiO2 have been performed applying a frequency of 10 kHz and various duty cycles. A model was developed which takes the intermittent cooling of the metallization and a partial backstreaming of the vacancies during off times into consideration. Experiments and calculations both show an enhanced lifetime and are in good agreement for the conditions examined.This publication has 4 references indexed in Scilit:
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- A model of electromigration failure under pulsed conditionJournal of Applied Physics, 1980
- Activation energy for electrotransport in thin aluminum films by resistance measurementsJournal of Physics and Chemistry of Solids, 1976
- Electromigration in conductor stripes under pulsed dc poweringApplied Physics Letters, 1972