Epitaxial regrowth of silicon implanted with argon and boron
- 15 March 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (6) , 594-596
- https://doi.org/10.1063/1.94838
Abstract
The epitaxial regrowth of silicon implanted with both argon and boron is performed by isochronal furnace and cw laser annealing. Argon is found to enhance the thermal anneal threshold for boron-silicon reordering, while itself exhibiting essentially no redistribution after annealing. Boron, by comparison, increases the solid-phase regrowth velocity and prevents the outdiffusion of argon. Based on these findings, a methodology for forming and preserving shallow boron junctions is suggested.Keywords
This publication has 5 references indexed in Scilit:
- Quantum-chemical modeling of boron and noble gas dopants in siliconJournal of Applied Physics, 1983
- Effect of argon implantation on the activation of boron implanted in siliconApplied Physics Letters, 1983
- Laser annealing of silicon implanted with both argon and arsenicApplied Physics Letters, 1980
- Epitaxial regrowth of Ar implanted amorphous Si by laser annealingJournal of Applied Physics, 1980
- Epitaxial regrowth of Ar-implanted amorphous siliconJournal of Applied Physics, 1978