Effect of argon implantation on the activation of boron implanted in silicon
- 15 May 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (10) , 878-880
- https://doi.org/10.1063/1.93772
Abstract
Argon ions were implanted either prior or subsequent to an ion implantation of boron into silicon wafers. After isochronal annealing at temperatures ranging from 500 to 900 °C, the samples were examined by a spreading resistance-carrier concentration profile and secondary ion mass spectroscopy. It is shown that argon implantation at a dose sufficient to produce an amorphous layer inhibits the electrical activation and diffusion of boron implanted in silicon.Keywords
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