Metalorganic growth of high-purity HgCdTe films
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10) , 1092-1094
- https://doi.org/10.1063/1.95027
Abstract
Epitaxial films of HgCdTe have been grown by metalorganic chemical vapor deposition. Diethyltelluride, dimethylcadmium, and elemental mercury were used as the starting reagents. For Hg1−xCdxTe compositions with x≤0.2, the films are n type at 300 and 77 K. From Hall measurements at 77 K a minimum carrier concentration of 1.0×1015 cm−3 and maximum mobility of 590 000 cm2/Vs were measured. Epitaxial films with x≊0.3 were also grown. The films are n type at 300 K but exhibit p-type behavior at 77 K. p-type carrier concentrations less than 5×1015 cm−3 were attained.Keywords
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