Single-crystal Al films grown by sputtering on (111)Si substrates
- 18 May 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (20) , 2520-2521
- https://doi.org/10.1063/1.106925
Abstract
Single-crystal growth of Al films deposited by the sputtering method on (111)Si substrates was investigated in detail by transmission electron microscopy studies. A single-crystal epitaxial Al film 500 nm thick was obtained by conducting an appropriate heat treatment during and after the deposition.Keywords
This publication has 6 references indexed in Scilit:
- Epitaxial growth of sputtered A1 films on Si(001) substratesPhilosophical Magazine Part B, 1991
- Epitaxial growth of Al on Si(001) by sputteringApplied Physics Letters, 1991
- Observation of a new Al(111)/Si(111) orientational epitaxyJournal of Applied Physics, 1990
- Epitaxial Growth of Al on Si by Gas-Temperature-Controlled Chemical Vapor DepositionJapanese Journal of Applied Physics, 1988
- Atomic structure of the epitaxial Al–Si interfacePhilosophical Magazine A, 1986
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984