High-Speed Epitaxy Using Supersonic Molecular Jets
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The effect of deposition rate on the growth of epitaxial Ge on GaAs (100)Journal of Applied Physics, 1990
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Doping properties of Ge on GaAs (100) grown by MBEJournal of Crystal Growth, 1989
- Heteroepitaxial Growth of Germanium Films by Supersonic Free Jet Chemical Beam EpitaxyMRS Proceedings, 1989
- Molecular Beam EpitaxyPublished by Springer Nature ,1989