Recombination centers in Czochralski-grown p-Si

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Abstract
A sensitive deep-level transient spectrometer operating in the range 300–600 K has been used to detect the defect responsible for the minority-carrier lifetime in p-type Czochralski-grown Si. The characteristics of this defect (energy level, barrier for hole capture, hole and electron capture rates, and concentration) have been determined. This level is, as expected, located near the middle of the forbidden gap. We verified that it is indeed responsible for the lifetime by a comparison between the calculated value and the result of direct measurements. If this defect is an impurity, it could be manganese.