Is the intrinsic conductivity of AlGaSb grown at low temperatures n or p type?
- 15 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6) , 656-658
- https://doi.org/10.1063/1.95346
Abstract
In liquid phase epitaxial GaSb and AlGaSb grown at low temperatures some papers reported p‐type conductivity and others observed the conversion to n‐type conductivity. In this paper, it is shown that p‐type conductivity is intrinsic at growth temperatures down to 350 °C and that the extrinsic impurities influence the concentration at lower growth temperatures than 350 °C.Keywords
This publication has 4 references indexed in Scilit:
- Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficientsIEEE Journal of Quantum Electronics, 1981
- The liquid-phase epitaxial growth of low net donor concentration (5 × 1014-5 × 1015/cm3) GaSb for detector applications in the 1.3 - 1.6 µm regionIEEE Journal of Quantum Electronics, 1981
- New anodic native oxide of GaAs with improved dielectric and interface propertiesApplied Physics Letters, 1975
- Undopedn-Type GaSb Grown by Liquid Phase EpitaxyJapanese Journal of Applied Physics, 1974