A new approach to determine the effective channel length and the drain-and-source series resistance of miniaturized MOSFET's
- 1 January 1994
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (10) , 1811-1818
- https://doi.org/10.1109/16.324592
Abstract
A new decoupled C-V method is proposed to determine the intrinsic (effective) channel region and extrinsic overlap region for miniaturized MOSFET's. In this approach, a unique channel-length-independent extrinsic overlap region is extracted at a critical gate bias, so bias-independent effective channel lengths (L(eff)) are achieved. Furthermore, the two-dimensional (2D) charge sharing effect is separated from the effective channel region. Based on this L(eff) and the associated bias-dependent channel mobility, mu(eff), the drain-and- source series resistance (R(DS)) can be derived from the I-V characteristics for each device individually. For the first time, the assumption or approximation for R(DS) and mu(eff) can be avoided, thus the difficulties and controversy encountered in the conventional I-V method can be solved. The 2D charge sharing effect is incorporated into the bias-dependent R(DS). This bias dependence is closely related to the drain/source doping profile and the channel dopant concentration. The proposed L(eff) and R(DS) extraction method has been verified by an analytical I-V model which shows excellent agreements with the measured I-V characteristics.Keywords
This publication has 15 references indexed in Scilit:
- Measuring the effective channel length of MOSFETsIEEE Circuits and Devices Magazine, 1990
- A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layersIEEE Transactions on Electron Devices, 1989
- On the accuracy of channel length characterization of LDD MOSFET'sIEEE Transactions on Electron Devices, 1986
- A derivative method to determine a MOSFET's effective channel length and width electricallyIEEE Electron Device Letters, 1986
- A modification on "An improved method to determine MOSFET channel length"IEEE Electron Device Letters, 1985
- Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET'sIEEE Transactions on Electron Devices, 1984
- Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layerIEEE Transactions on Electron Devices, 1983
- An improved method to determine MOSFET channel lengthIEEE Electron Device Letters, 1982
- Measurement of MOSFET constantsIEEE Electron Device Letters, 1982
- Characterization of the electron mobility in the inverted Si surfacePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979