Theoretical Analysis of Explosively Propagating Molten Layers in Pulsed-Laser-Irradiateda−Si

Nanosecond-pulsed-laser melting of amorphous ($a$) Si on crystalline ($c$) Si substrates produces a highly undercooled liquid ($l$) that solidifies into a complex morphology. Recently developed techniques for including undercooling, interface kinetics, and nucleation in heat-flow calculations are used to analyze the experimental results. It is shown how explosive crystallization, involving the difference in the $a$- and $c$-phase latent heats, can produce a nearly self-sustaining crystallization front mediated by a thin $l$ layer.