Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening

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  • 18 April 2000
Abstract
We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behaviour which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi-liquid describes our data in spite of the large r_s = 8.

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