Low-frequency noise measurements in silicon avalanche photodiodes
- 1 March 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (3) , 383-385
- https://doi.org/10.1109/t-ed.1966.15698
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966
- MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA-FREE CARRIER MULTIPLICATIONApplied Physics Letters, 1965
- High-speed photodiode signal enhancement at avalanche breakdown voltageIEEE Transactions on Electron Devices, 1965
- Noise in high speed avalanche photodiodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1965
- Avalanche multiplication in InAs photodiodesProceedings of the IEEE, 1965
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Photodiode signal enhancement effect at avalanche breakdown voltagePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1964