Plasma oxidation of Ba2YCu3O7−y thin films
- 15 August 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (7) , 618-620
- https://doi.org/10.1063/1.100636
Abstract
We studied the effects of plasma oxidation on the electrical properties of Ba2YCu3O7−y thin films. Films were prepared by electron beam evaporation, then annealed in oxygen. Plasma oxidation, performed in a barrel reactor, lowered the room‐temperature resistivity of films and raised the zero‐resistance temperature. Film resistivity increased a few percent a day after plasma oxidation. The rate of resistivity increase is several times that of untreated samples. Changes in resistivity and critical temperature could be completely reversed by repeated plasma treatment.Keywords
This publication has 12 references indexed in Scilit:
- Thin-film YBaCuO superconductors formed by Cu/BaO/Y2O3 layer structuresApplied Physics Letters, 1988
- Low-temperature process for the preparation of high T c superconducting thin filmsApplied Physics Letters, 1987
- Growth of high T c superconducting thin films using molecular beam epitaxy techniquesApplied Physics Letters, 1987
- YBaCuO superconducting thin films with zero resistance at 84 K by multilayer depositionApplied Physics Letters, 1987
- Preparation of superconducting YBa2Cu3Ox thin films by oxygen annealing of multilayer metal filmsApplied Physics Letters, 1987
- Critical current densities and transport in superconducting YBa2Cu3O7−δ films made by electron beam coevaporationApplied Physics Letters, 1987
- Structural and superconducting properties of orientation-ordered films prepared by molecular-beam epitaxyPhysical Review B, 1987
- Superconducting Y-Ba-Cu-O oxide films by sputteringApplied Physics Letters, 1987
- Thin superconducting oxide filmsPhysical Review B, 1987
- Superconductivity at 93 K in a new mixed-phase Y-Ba-Cu-O compound system at ambient pressurePhysical Review Letters, 1987