A Direct Method For Measuring The Gate Oxide Capwi-hnces Of MOSFETS
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A capacitance method to determine the gate-to-drain/Source overlap length of MOSFET'sIEEE Electron Device Letters, 1987
- Precision measurement technique of integrated MOS capacitor mismatching using a simple on-chip circuitIEEE Transactions on Electron Devices, 1986
- Measurement of minimum-geometry MOS transistor capacitancesIEEE Transactions on Electron Devices, 1985
- On-chip capacitance measurement circuits in VSLI structuresIEEE Transactions on Electron Devices, 1982