Comparison of pulsed laser and furnace annealing of nitrogen-implanted silicon
- 1 July 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (1) , 193-196
- https://doi.org/10.1063/1.335707
Abstract
We have studied pulsed ruby laser and furnace annealing of high-dose (D>1017 N/cm2) 50-keV nitrogen-implanted silicon. Using Rutherford backscattering and channeling, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation, and nitride formation. As has been previously reported, during furnace annealing at or above 1200 °C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4) layer. In contrast, pulsed laser melting produces a buried amorphous layer containing silicon and nitrogen with only very small amounts of polycrystalline silicon nitride below a layer of polycrystalline silicon.This publication has 5 references indexed in Scilit:
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