Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III-V semiconductors
- 4 August 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (5) , 677-679
- https://doi.org/10.1063/1.119827
Abstract
We show that surface reconstructions may play an essential role in determining the equilibrium solubilities of N, P, As, and Sb in various III-V compounds. In particular, anion–anion dimerization of the (001)-β2(2×4) surface can enhance the solubility of N near the surface in GaAs, GaP, and InP by five, three, and two orders of magnitudes, respectively, at 1000 K. With certain assumptions on the growth kinetics, this high concentration of N may be frozen in as the crystal grows.Keywords
This publication has 19 references indexed in Scilit:
- Scanning Tunneling Microscopy Study of: An Exception to the Dimer ModelPhysical Review Letters, 1996
- Surface segregation and ordering in III-V semiconductor alloysPhysical Review B, 1996
- Volume-expansion-induced lattice instability and solid-state amorphizationPhysical Review B, 1996
- Observation of the formation of a carbon-rich surface layer in siliconPhysical Review B, 1995
- Temperature variation of the ESR parameters of the self-trapped-electron center inPhysical Review B, 1995
- Structure of GaAs(001) surfaces: The role of electrostatic interactionsPhysical Review B, 1994
- Energetics of GaAs(100)-(2×4) and -(4×2) reconstructionsPhysical Review Letters, 1993
- First-principles calculation of alloy phase diagrams: The renormalized-interaction approachPhysical Review B, 1989
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966