Direct observations of ion-implanted xenon marker layers in anodic barrier films on aluminium
- 1 February 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 88 (3) , 255-262
- https://doi.org/10.1016/0040-6090(82)90054-2
Abstract
No abstract availableKeywords
Funding Information
- British Council
- Ministry of Education of the People's Republic of China
This publication has 8 references indexed in Scilit:
- Observation of flaws in anodic films on aluminiumNature, 1980
- The Behavior of Implanted Xenon When Used as a Marker during the Anodic Oxidation of Aluminum: Evidence for an Explanation of a Dose‐Dependant Splitting EffectJournal of the Electrochemical Society, 1980
- The application of ultramicrotomy to the electronoptical examination of surface films on aluminiumCorrosion Science, 1978
- Carbide formation on Nb surfaces during high−temperature H irradiationJournal of Vacuum Science and Technology, 1975
- The Use of Rutherford Backscattering to Study the Behavior of Ion-Implanted Atoms During Anodic Oxidation of Aluminum: Ar, Kr, Xe, K, Rb, Cs, Cl, Br, and lJournal of the Electrochemical Society, 1973
- Transport Numbers of Metal and Oxygen during the Anodic Oxidation of TantalumJournal of the Electrochemical Society, 1973
- The Migration of Metal and Oxygen during Anodic Film FormationJournal of the Electrochemical Society, 1965
- The Use of α-Spectroscopy for Studying Anodic OxidationJournal of the Electrochemical Society, 1963