Dislocation arrangements in gaas/ga1−xlnxas multilayers grown on (001), (111) and (112) substrates
- 1 July 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (7) , 723-734
- https://doi.org/10.1007/bf02665958
Abstract
No abstract availableKeywords
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