Bias dependence of Schottky barrier height in GaAs from internal photoemission and current-voltage characteristics
- 15 September 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (6) , 3977-3982
- https://doi.org/10.1063/1.354467
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- ‘‘Pinning’’ and Fermi level movement at GaAs surfaces and interfacesJournal of Vacuum Science & Technology A, 1990
- Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfacesJournal of Vacuum Science & Technology B, 1986
- Calculation of Schottky barrier heights from semiconductor band structuresSurface Science, 1986
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Schottky-Barrier Anomalies and Interface StatesJournal of Applied Physics, 1971
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Surface-State and Interface Effects in Schottky Barriers at n-Type Silicon SurfacesJournal of Applied Physics, 1965
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965