Dielectric functions and critical points of strained InxGa1−xAs on GaAs
- 11 May 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (19) , 2412-2414
- https://doi.org/10.1063/1.106989
Abstract
Dielectric function spectra of strained InxGa1−xAs (x≤0.25) epilayers on GaAs are presented for the first time, together with spectra of relaxed layers of the same compositions. Critical point energies, obtained by line-shape fitting to second-derivative spectroscopic ellipsometry (SE) data, show an increase in the E1, E1+Δ1 splitting with strain, in agreement with theory using GaAs deformation potentials. SE is shown to be capable of determining layer thickness, composition, and strain in this alloy system.Keywords
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