Diluted magnetic semiconductor (Cd1−xMnxTe) Schottky diodes and field-effect transistors

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Abstract
We report the first demonstration of electronic devices, Schottky diodes, and metal‐semiconductor field‐effect transistors, in a diluted magnetic semiconductor Cd1−xMnxTe. These devices were fabricated using n‐type, indium‐doped CdMnTe films grown by photoassisted molecular beam epitaxy on (100) CdTe and CdZnTe substrates. Epitaxial layers with carrier concentrations of 1×1017 cm−3 and electron mobilities as large as 720 cm2/V s at 120 K were used. The Schottky diodes have turn‐on voltages of 0.8 V, idealities in the range between 1.27 and 1.7, and reverse breakdown voltages from 5.5 to 10.5 V reverse bias. The 100 μm gate length transistors have transconductances of 1 mS/mm.