ZnSe-ZnSSe electro-optic waveguide modulators
- 16 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (25) , 3228-3229
- https://doi.org/10.1063/1.105740
Abstract
Rib waveguides have been fabricated in the ZnSe-ZnSSe material system, grown by molecular beam epitaxy on GaAs substrates. Using Schottky barrier contacts, rib-waveguide optical phase modulators have been demonstrated and the strength of the linear electro-optic (Pockels) effect has been measured. A change in the index of refraction of Δn/ΔF=±1.7×10−9 cm/V has been attained for 633 nm light. This translates to a maximum Δn of 0.0008. Rib waveguides with losses as low as 0.66 cm−1 have been measured.Keywords
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