ZnSe/ZnSe0.92S0.08/GaAs single-crystal waveguides as visible modulators

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Abstract
Electro-optic and electroabsorptive modulations have been demonstrated in Schottky barriers in epitaxial ZnSe waveguides with cladding layers of ZnSeS grown single crystal on GaAs substrates. Using an argon laser we demonstrate guided-wave electro-optic modulation with voltages which are predicted by bulk ZnSe electro-optic coefficients. With a 3 mm sample, half-wave modulation was observed at 4 V per micron electrode separation. Electroabsorption with 9.2 dB modulation in a 0.6-mm-long sample was observed at 488 nm. With surface electrodes, rectification within the Schottky barrier made possible a unique rectified optical modulation.