Electroabsorption spectroscopy of well and barrier materials in amorphous semiconductor superlattices
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10) , 1132-1134
- https://doi.org/10.1063/1.95044
Abstract
Electroabsorption spectra of well and barrier regions have been separately determined in hydrogenated amorphous silicon/silicon carbide superlattices by taking advantage of built-in electric fields. Significant energy shifts are observed in materials with thin (<40 Å) layers. The data are consistent with a quantum size effect in the wells and substantial tunneling into the barriers, as predicted by a simple Kronig–Penney model.Keywords
This publication has 12 references indexed in Scilit:
- Charge transfer doping in amorphous semiconductor superlatticesApplied Physics Letters, 1984
- Bandgap and resistivity of amorphous semiconductor superlatticesJournal of Non-Crystalline Solids, 1984
- Properties of amorphous semiconducting multilayer filmsJournal of Non-Crystalline Solids, 1984
- Evidence for Lattice-Mismatch—Induced Defects in Amorphous Semiconductor HeterojunctionsPhysical Review Letters, 1984
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983
- Determination of the Built-in Potential in a-Si Solar Cells by Means of Electroabsorption MethodJapanese Journal of Applied Physics, 1982
- Temperature and field dependence of the optical absorption edge in amorphous As2S3Journal of Physics C: Solid State Physics, 1974
- On the Theory of Electroabsorption in Disordered SemiconductorsPhysica Status Solidi (b), 1972
- Toward a Unified Theory of Urbach's Rule and Exponential Absorption EdgesPhysical Review B, 1972
- Franz‐Keldysh‐Effekt an trigonalem und amorphem SelenPhysica Status Solidi (b), 1966