Charge transfer doping in amorphous semiconductor superlattices
- 15 July 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (2) , 179-181
- https://doi.org/10.1063/1.95161
Abstract
Charge transfer doping of amorphous silicon by amorphous silicon nitride is demonstrated in amorphous semiconductor superlattice structures. The transfer-doped material has lower gap-state density and higher photoconductivity than conventional substitutionally doped material.Keywords
This publication has 7 references indexed in Scilit:
- Doping effects in off-stoichiometric glow discharge amorphous silicon nitrideApplied Physics Letters, 1984
- The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers needIEEE Spectrum, 1984
- Surface states in P- and B-doped amorphous hydrogenated siliconPhysical Review B, 1983
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983
- Comment on the optical absorption edge in a-Si:HSolid State Communications, 1983
- Recombination centers in phosphorous doped hydrogenated amorphous siliconSolid State Communications, 1982
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982