Ab initio total energy calculations of impurity pinning in silicon
- 16 August 1993
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 138 (2) , 383-387
- https://doi.org/10.1002/pssa.2211380204
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- The interaction of oxygen with dislocation cores in siliconPhilosophical Magazine A, 1993
- Interaction of impurities with dislocation cores in siliconPhilosophical Magazine A, 1991
- Calculation of the localized electronic states associated with static and moving dislocations in siliconPhilosophical Magazine Part B, 1983
- Interaction of dislocations with impurities in silicon crystals studied byin situX-ray topographyPhilosophical Magazine A, 1983
- In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystalsPhilosophical Magazine A, 1983