Surface state and surface recombination velocity characteristics of Si-SiO2interfaces
- 1 February 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (2) , 260-268
- https://doi.org/10.1109/t-ed.1966.15678
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor StructuresJournal of Applied Physics, 1964
- Variation with frequency of the transverse impedance of semiconductor surface layersJournal of Physics and Chemistry of Solids, 1962
- Low-current alpha in silicon transistorsIRE Transactions on Electron Devices, 1962
- A New Semiconductor Tetrode-The Surface-Potential Controlled TransistorProceedings of the IRE, 1961
- Distribution and Cross-Sections of Fast States on Germanium SurfacesBell System Technical Journal, 1956
- Effect of Electric Field on Surface Recombination Velocity in GermaniumPhysical Review B, 1956
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955
- Surface Properties of GermaniumBell System Technical Journal, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952