New experimental evidence of the periodic surface structure in laser annealing
- 15 November 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (10) , 782-784
- https://doi.org/10.1063/1.90977
Abstract
This letter presents a study of the nature of the periodic structure observed on the edge of laser-annealed spots on ion-implanted silicon. The direction of the periodic fringes was always found to be about perpendicular to the E vector of the light for linearly polarized beams. No fringe pattern was observed for circular polarization. We suggest that the pattern observed is due to heating by a standing wave resulting from the interference of the impinging wave and a radial (longitudinal) scattered wave.Keywords
This publication has 4 references indexed in Scilit:
- On the origin of periodic surface structure of laser-annealed semiconductorsApplied Physics Letters, 1978
- Periodic regrowth phenomena produced by laser annealing of ion-implanted siliconApplied Physics Letters, 1978
- Annealing of Te-implanted GaAs by ruby laser irradiationApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978