F/Tb Ratio Dependence of the Photoluminescent and Electroluminescent Characteristics in MOCVD-Prepared ZnS:TbFx Green-Emitting Electroluminescent Devices

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Abstract
The photoluminescent characteristics of MOCVD-prepared ZnS:TbF x films are highly dependent on x, while the eletroluminescent characteristics are independent of x. For photoluminescence excitation at 330 nm, which is indirect excitation from the ZnS host to the Tb center, the photoluminescent intensity increases rapidly with a decrease in x, while for the photoluminescence excitation at 377 nm, which is a direct excitation of the Tb center, the photoluminescent intensity is independent of x. On the other hand, the electroluminescent intensity of devices prepared using these films is almost independent of x. The difference in the site of the F ion between MOCVD- and sputtering-prepared films is discussed as well as the excitation mechanism for photoluminescence and electroluminescence.