Computer analysis of back-surface field silicon solar cells
- 1 November 1975
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (11) , 5043-5045
- https://doi.org/10.1063/1.321496
Abstract
A series of new metal‐dithiene complexes absorbing in the near infrared were shown to Q switch the Nd‐glass laser. Attempts to shorten the ground‐state recovery time by heavy‐atom substituents led to the preparation of a platinum complex which causes partial mode locking of the laser. The new Q‐switch dyes are extremely stable towards infrared radiation.This publication has 5 references indexed in Scilit:
- A new look at silicon solar cell performanceEnergy Conversion, 1971
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Drift fields in photovoltaic solar energy converter cellsProceedings of the IEEE, 1963
- The potentialities of silicon and gallium arsenide solar batteriesSolid-State Electronics, 1961
- Thermal Generation of Recombination Centers in SiliconPhysical Review B, 1957