Growth of low carbon content AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alane
- 1 November 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 106 (2-3) , 253-257
- https://doi.org/10.1016/0022-0248(90)90071-r
Abstract
No abstract availableKeywords
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- The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructuresJournal of Crystal Growth, 1986
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