Simultaneous phase separation and basal-plane atomic ordering in InxGa1−xN
- 30 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (22) , 3256-3258
- https://doi.org/10.1063/1.122736
Abstract
Reported discrepancy of phase separation in InxGa1−xN films between experimental studies and theoretical calculations based on the usual regular solution model is discussed from the standpoint of phase diagram. The inclusion of higher-order pairwise interactions in the theoretical model may allow the system to undergo a spinodal decomposition in an asymmetrical manner as revealed by experiments. It is suggested that basal-plane atomic ordering in the In-rich precipitates should accompany the decomposition.Keywords
This publication has 11 references indexed in Scilit:
- Phase separation in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- Bandgap Anomaly, Atomic Ordering, and Their ApplicationsMRS Bulletin, 1997
- Order and Surface Processes in III-V Semiconductor AlloysMRS Bulletin, 1997
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy compositionApplied Physics Letters, 1997
- Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 KApplied Physics Letters, 1996
- Incomplete Solubility in Nitride AlloysMRS Proceedings, 1996
- Growth of InGaN Films by MBE at the Growth Temperature of GaNMRS Proceedings, 1995
- Ground state structures in ordered binary H.C.P. alloys with pairwise third neighbour interactionsActa Metallurgica et Materialia, 1991
- Preparation and optical properties of Ga1−xInxN thin filmsJournal of Applied Physics, 1975
- Ground state structures in ordered binary alloys with second neighbor interactionsActa Metallurgica, 1972