Bandgap Anomaly, Atomic Ordering, and Their Applications
- 1 July 1997
- journal article
- Published by Springer Nature in MRS Bulletin
- Vol. 22 (7) , 33-37
- https://doi.org/10.1557/s0883769400033388
Abstract
In 1916 a group of Russian chemists—Kurnakov and his colleagues—discovered that slowly cooled CuxAu1 − xmetal alloys had anomalously low electrical resistivities at simple compositions of CuAu and Cu3Au. Nine years later in 1925, Swedish physicists Johansson and Linde found by x-ray-diffraction experiments that the alloys had ordered structures on the face-centered-cubic lattice, now called CuAu I-type and AuCu3-type. Two years later, Johansson and Linde discovered CuPt-type ordering in Cu0.5Pt0.5 alloy by noticing a similar anomaly in their electrical-resistivity measurements for CuxPt1 − x. These were among the events at the dawn of physical metallurgy and study on order-disorder transformations. Many years later in 1985, the first observation of ordering in semiconductor alloys was made in AlGaAs grown on GaAs(110); the type was CuAu I. CuPt-type ordering was observed in SiGe grown on Si(001). Since the (110) orientation of the substrate for AlGaAs was clumsy for practical purposes and the degree of ordering in SiGe was extremely low, these phenomena seemed to have little relevance in practical applications. Other observations were made such as famatinite-type ordering in GalnAs and chalcopyrite-type ordering in GaAsSb. These observations however were quite rare, with only isolated cases reported.Keywords
This publication has 26 references indexed in Scilit:
- Surface dimerization induced CuPtB versus CuPtA ordering of GaInP alloysApplied Physics Letters, 1995
- Accelerated aging for AlGaInP visible laser diodesApplied Physics Letters, 1994
- Observation of stripe-direction dependence of threshold current density for AlGaInP laser diodes with CuPt-type natural superlattice in Ga0.5In0.5P active layerApplied Physics Letters, 1992
- Spontaneous surface-induced long-range order inP alloysPhysical Review B, 1991
- Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice DisorderingJapanese Journal of Applied Physics, 1990
- Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surfacePhysical Review Letters, 1989
- Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientationElectronics Letters, 1989
- Observation of Strong Ordering inalloy semiconductorsPhysical Review Letters, 1988
- Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperatureJournal of Crystal Growth, 1986
- Atomic structure and ordering in semiconductor alloysPhysical Review B, 1985