1fnoise in GaAs: Evidence of a new scale invariance

Low-frequency noise measurements were made in the temperature range of 77-340 K on submicrometer resistors made from GaAs grown by molecular-beam epitaxy. Two types of noise were found, depending on surface treatment. One type consisted of discrete spectral components which showed no anomalous statistical behavior. The other type was a small $\frac{1}{f}$ component which showed anomalously large variations in spectral density, with these variations themselves having a $\frac{1}{f}$ spectrum.