Effect of doping on carrier range in a-Si:H-xerographic studies
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 115 (1-3) , 213-215
- https://doi.org/10.1016/0022-3093(89)90408-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous siliconApplied Physics A, 1986
- Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond statePhilosophical Magazine Part B, 1984
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Trapping parameters of dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- Onsager mechanism of photogeneration in amorphous seleniumPhysical Review B, 1975
- Kinematics of deep trapping in amorphous seleniumJournal of Non-Crystalline Solids, 1972