Preparation and Characterization of Ferroelectric Bi 4Ti 3O 12 Thin Films Grown on (100)-Oriented Silicon Wafers
- 1 September 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (9S)
- https://doi.org/10.1143/jjap.35.4984
Abstract
Ferroelectric bismuth titanate (Bi4Ti3O12) thin films were prepared directly on (100) silicon substrate by rf planar magnetron sputtering using a Bi2TiO5 ceramic target. Highly c-axis-oriented films were obtained at a high deposition rate of about 17 nm/min. The deposited thin films, consisting of plate-like grains about 2 µm in diameter, were grown uniformly parallel to the substrate surface. The remanent polarization (P r) and the coercive field (E c) of this film at 50 Hz were estimated to be 0.8 µC/cm2 and 20 kV/cm, respectively.Keywords
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