Preparation of Ferroelectric Bi4Ti3O12 Thin Films with c-Axis Orientation by Atmospheric-Pressure Metal-Organic Chemical Vapor Deposition
- 1 May 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (5R)
- https://doi.org/10.1143/jjap.34.2425
Abstract
Ferroelectric Bi4Ti3O12 thin films were prepared by the metal-organic chemical vapor deposition (MOCVD) method at atmospheric pressure using Bi( o-C7H7)3 and Ti( i-OC3H7)2(DPM)2 as metalorganic sources. Assist Ar gas flow rate effects on the growth of the thin films were also examined. Thin films obtained were characterized by XRD analysis, SEM, AFM and D-E hysteresis loop observations. Most of the single-phase Bi4Ti3O12 thin films with c-axis orientation were deposited on Pt/Ti/SiO2/Si and Pt substrates above 500° C. Completely c-axis-oriented Bi4Ti3O12 thin films were prepared on Pt plates at 600° C, which showed good ferroelectric properties: remanent polarization of 1.0 µ C/cm2, coercive field of 18 kV/cm and leakage current on the order of 10-9 A/cm2.Keywords
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