Relaxation-oscillation phenomena in an injection-locked semiconductor laser

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Abstract
Relaxation-oscillation (RO) phenomena in a semiconductor diode laser with external optical injection are studied. We extend the concept of `locked dynamics' to include excited ROs. A two-variable scalar function W is constructed, from which the `slow' (transient) dynamics of the RO can be derived as well as an earlier published `potential' model. The function W is used to investigate bifurcations of the RO dynamics in the locking region. The location of the Hopf and the period-doubling bifurcations are in good, respectively fair, agreement with numerical simulations. A bistability is recovered and the dependence on the linewidth enhancement parameter (`the -parameter') is studied.