Localized Photoprocesses at Semiconductor-Electrolyte Interfaces Using a Programmable Laser Spot Scanner

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Abstract
A highly focused laser can be used to perform spatially selective photoelectrochemistry at semiconductor-electrolyte interfaces. These processes may be used for imaging (etching, deposition, etc.) or for nondestructive mapping of semiconductor properties from photoelectric response. A programmable laser scanner is described which can be used for both. An example of imaging is given for photoelectrochemical etching of pits in CdSe electrodes, which may be applied to archival data storage. Nondestructive evaluation is shown for a CdS crystal, in which the lateral distribution of subband gap photovoltage response is related to surface states incurred by polishing damage.