Complex fine-structure of GaP photoluminescence at 4.2°K
- 15 July 1962
- journal article
- Published by Elsevier in Physics Letters
- Vol. 1 (8) , 332-333
- https://doi.org/10.1016/0031-9163(62)90415-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Bound Exciton ComplexesPhysical Review Letters, 1961
- Some Properties of p-n Junctions in GaPJournal of Applied Physics, 1961
- Infrared Lattice Absorption of GaPPhysical Review B, 1960
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960
- Mobile and Immobile Effective-Mass-Particle Complexes in Nonmetallic SolidsPhysical Review Letters, 1958