Determination of deep electron traps in GaAs by time-resolved capacitance measurement
- 1 May 1977
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 13 (1) , 5-13
- https://doi.org/10.1007/bf00890712
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Study of electron traps in n-GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1976
- Time Dependent Potential in Planar Gunn-Effect DeviceJapanese Journal of Applied Physics, 1976
- Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistorsElectronics Letters, 1976
- A study of electron traps in vapour-phase epitaxial GaAsApplied Physics B Laser and Optics, 1975
- Majority-carrier traps in n - and p -type epitaxial GaAsElectronics Letters, 1975
- Deep levels in gallium arsenide by capacitance methodsApplied Physics A, 1974
- Characteristics and applications of a Schottky-barrier-gate Gunn-effect digital-deviceIEEE Transactions on Electron Devices, 1974
- Photocapacitance studies in high-purity GaAsPhysica Status Solidi (a), 1974
- Depth profile of concentration of deep-level impurities in vapor-phase epitaxial gallium-arsenide grown under various arsenic vapor pressuresJournal of Applied Physics, 1973
- LOW FREQUENCY CURRENT FLUCTUATIONS IN A GaAs GUNN DIODEApplied Physics Letters, 1968