High-performance solution-processed polymer ferroelectric field-effect transistors
Top Cited Papers
- 20 February 2005
- journal article
- research article
- Published by Springer Nature in Nature Materials
- Vol. 4 (3) , 243-248
- https://doi.org/10.1038/nmat1329
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistorsApplied Physics Letters, 2004
- All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate InsulatorAdvanced Materials, 2004
- Mechanism for bistability in organic memory elementsApplied Physics Letters, 2004
- Flexible active-matrix displays and shift registers based on solution-processed organic transistorsNature Materials, 2004
- A polymer/semiconductor write-once read-many-times memoryNature, 2003
- Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal–ferroelectric–metal assistance cellJournal of Applied Physics, 2003
- One Transistor Ferroelectric Memory Devices with Improved Retention CharacteristicsJapanese Journal of Applied Physics, 2002
- Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulatorApplied Physics Letters, 2001
- Theory of the field-effect mobility in amorphous organic transistorsPhysical Review B, 1998
- Physics of the ferroelectric nonvolatile memory field effect transistorJournal of Applied Physics, 1992