Cluster calculations of local vibrational mode frequencies of impurities in III-V semiconductors: applications to defect complexes involving CAsin GaAs
- 1 November 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (11) , 1295-1305
- https://doi.org/10.1088/0268-1242/7/11/002
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Instabilities of simple models of C-Asicomplexes in gallium arsenideSemiconductor Science and Technology, 1992
- Localized Vibrational Mode Absorption of Silicon Donors and Beryllium Acceptors in MBE GaAs, InAs and InSbMaterials Science Forum, 1992
- Structure and dynamics of theDXcenter in GaAs:SiPhysical Review B, 1991
- Fine structure of the LVM-lines from (CAs-Asi) complexes in irradiated GaAsJournal of Molecular Structure, 1991
- Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxyApplied Physics Letters, 1990
- "Direct" evaluation of the inverse dielectric matrix in semiconductorsPhysical Review B, 1984
- Infrared absorption spectrum of B-doped SiPhysical Review B, 1983
- Host isotope fine structure of local modes: C and Si in GaAsJournal of Physics C: Solid State Physics, 1982
- Extension of the molecular model for isoelectronic impuritiesSolid State Communications, 1972
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966