"Direct" evaluation of the inverse dielectric matrix in semiconductors

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Abstract
The static inverse dielectric matrix is a ground-state property and, as such, can be calculated directly, using the local-density-functional theory, in a similar way as energies of "frozen phonons" have been determined recently. The present method includes quite naturally the exchange-correlation effects and applies to both linear and nonlinear screening. Results are presented on Ge and GaAs and are compared with previous random-phase-approximation calculations.