Schottky I/sup 2/L (substrate fed logic) - An optimum form of I/sup 2/L
- 1 April 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 12 (2) , 123-127
- https://doi.org/10.1109/JSSC.1977.1050859
Abstract
A modified form of Schottky I/SUP 2/L (originally called substrate fed logic) has been developed, differing from the earlier process mainly in the extrinsic n-p-n base profile. Heavier boron doping in this region has led to reduced charge storage so that minimum delays as low as 8 ns/gate at a power of 50 /spl mu/W are now achieved in ring oscillator circuits. The reduced minimum delay also applies to more complex gates, as demonstrated by a D-type flip-flop which operated at 20 MHz with a power dissipation of 70 /spl mu/W/gate. The excellent yield and high packing density which have been obtained on trial circuits demonstrate that the process is capable of very large scale integration.Keywords
This publication has 2 references indexed in Scilit:
- Substrate fed logicIEEE Journal of Solid-State Circuits, 1975
- Substrate fed logic - An improved form of injection logicPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1974