Silicon crystallite formation in ion-implanted quartz
- 18 September 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (12) , 1199-1201
- https://doi.org/10.1063/1.102463
Abstract
Rapid thermally annealed silicon-implanted x-cut α-quartz samples have been examined by Rutherford backscattering and Raman microprobe spectroscopy. The data indicate that the silicon has diffused at 1200 °C to form a buried layer of crystallites of size 1–10 μm. The crystallites are preferentially oriented and under substantial stress.Keywords
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