3D defect distribution induced by focused ion beam irradiation at variable temperatures in a GaAsGaAlAs multi quantum well structure
- 31 January 1996
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 30 (1-4) , 253-256
- https://doi.org/10.1016/0167-9317(95)00239-1
Abstract
No abstract availableKeywords
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